Touch-sensor structures and methods of forming the same

ABSTRACT

A touch-sensor structure includes a first conductive layer, a second conductive layer, insulating isolation portions, and an intermediate conductive layer. The first conductive layer includes first conductive units, connection lines and second conductive units. Each connection line connects to two first conductive units. The second conductive layer includes bridge lines. Each bridge line is electrically connected to two second conductive units. The insulating isolation portion is disposed between the connection line and the bridge line. The intermediate conductive layer is at least disposed at an overlapping position between the bridge lines and the second conductive units to isolate the first conductive layer from the second conductive layer. The intermediate conductive layer electrically connects each bridge line to the corresponding second conductive units.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a divisional of and claims priority to U.S. patentapplication Ser. No. 14/564,023, titled “Touch-sensor structures andmethods of forming the same”, filed on Dec. 8, 2014, now pending, whichclaims priority to Chinese Application Serial Number 201310657434.4,filed on Dec. 9, 2013, which is herein incorporated by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The disclosure relates to touch device technology, and in particular, totouch-sensor structures and methods of forming the same.

Description of the Related Art

Recently, touch panel techniques have been developed to be a main inputmethod and have been popularly applied in various electronic products,such as mobile phones, personal digital assistants (PDA), and handheldpersonal computers. Touch sensors of a touch panel are usually formedfrom a first indium tin oxide (ITO) layer and a second ITO layer. Thefirst ITO layer forms a plurality of sensing-electrode patternsconnecting with each other and arranged to form a plurality of columns,and a plurality of sensing-electrode patterns separated from each otherand arranged to form a plurality of rows. The second ITO layer formsjumpers for electrically connecting the sensing-electrode patternsseparated from each other and arranged in the rows.

The jumpers from the second ITO layer are usually formed by an etchingprocess. However, if the first and second ITO layers are formed from thesame material, an etching solution for etching the second ITO layer willalso damage the first ITO layer. Thus, the first ITO layer is made of acrystalline indium tin oxide and the second ITO layer is made of anon-crystalline indium tin oxide. Next, an etching solution, which canonly etch the non-crystalline indium tin oxide and cannot etch thecrystalline indium tin oxide, is used to etch the non-crystalline indiumtin oxide of the second ITO layer to avoid damaging the first ITO layer.

BRIEF SUMMARY OF THE INVENTION

The second ITO layer made of the non-crystalline indium tin oxide easilyproduces a re-crystalline phenomenon during the fabrication processes ofconventional touch panels. The etching solution cannot completely etchthe second ITO layer to form the required pattern. It causes a short oropen issue to occur between the sensing-electrode patterns of the touchsensors. The touch-sensing function of conventional touch panels isoften poor, or fails altogether. The disclosure provides touch-sensorstructures and methods of forming the same to overcome theaforementioned problems associated with conventional touch panels.According to embodiments of the disclosure, an intermediate conductivelayer is disposed between a first conductive layer and a secondconductive layer of touch sensors, such that the second conductive layeris not recrystallized. Therefore, it can prevent the second conductivelayer from an incomplete etching.

According to some embodiments of the disclosure, a touch-sensorstructure is provided. The touch-sensor structure comprises a firstconductive layer including a plurality of first conductive unitsarranged along a first axis, a plurality of connection lines, and aplurality of second conductive units arranged along a second axis,wherein the second conductive units are correspondingly disposed at twoopposite sides of each connection line, and the two ends of eachconnection line are connected to two adjacent first conductive units.The touch-sensor structure also comprises a second conductive layerincluding a plurality of bridge lines, wherein the two ends of eachbridge line are respectively electrically connected to the secondconductive units disposed at the two opposite sides of each connectionline. The touch-sensor structure further comprises a plurality ofinsulating isolation portions respectively disposed between each of theconnection lines and each of the bridge lines, which correspond witheach other, for insulating the first conductive units from the secondconductive units. In addition, the touch-sensor structure comprises anintermediate conductive layer at least disposed at overlapping positionsbetween the bridge lines and the second conductive units to isolate thefirst conductive layer from the second conductive layer without cominginto direct contact, wherein the intermediate conductive layer hasconductivity and electrically connects each of the bridge lines with thecorresponding second conductive units.

In some embodiments, the touch-sensor structure further comprises asubstrate. The first conductive layer is disposed on the substrate. Thematerial of the first conductive layer is a crystalline indium tin oxideand the material of the second conductive layer is a non-crystallineindium tin oxide.

In some embodiments, the intermediate conductive layer is furtherdisposed on the first conductive units, the connection lines and thesecond conductive units. The intermediate conductive layer has a patterncorresponding to the pattern of the first conductive units, theconnection lines and the second conductive units.

In some embodiments, the first conductive layer includes a first regionand a second region. The first region is a region of the firstconductive layer overlapping the insulating isolation portions. Thesecond region is a region of the first conductive layer that does notoverlap the insulating isolation portions. The intermediate conductivelayer is further disposed in the second region of the first conductivelayer and directly contacts with the first conductive layer. Theintermediate conductive layer has a pattern corresponding to andoverlapped with the pattern of the first conductive layer in the secondregion.

In some embodiments, the intermediate conductive layer is furtherdisposed between each of the bridge lines and each of the insulatingisolation portions, which correspond with each other. The intermediateconductive layer has a pattern corresponding to the pattern of thebridge lines.

In some embodiments, the touch-sensor structure further comprises asubstrate. The second conductive layer is disposed on the substrate. Thematerial of the second conductive layer is a crystalline indium tinoxide and the material of the first conductive layer is anon-crystalline indium tin oxide.

In some embodiments, the intermediate conductive layer is disposed atthe overlapping positions between the bridge lines and the secondconductive units. In addition, the intermediate conductive layer wrapsthe outer sides of the bridge lines.

In some embodiments, the intermediate conductive layer is furtherdisposed between each of the connection lines and each of the insulatingisolation portions, which correspond with each other. The intermediateconductive layer is also disposed between the first conductive units,the second conductive units and the substrate. In addition, theintermediate conductive layer has a pattern corresponding to the patternof the first conductive units, the connection lines and the secondconductive units.

In some embodiments, the material of the intermediate conductive layeris made of a transparent conductive material. The transparent conductivematerial is selected from a group consisting of tin oxide, zinc oxide,aluminum doped zinc oxide, zinc gallium oxide, indium zinc oxide, indiumgallium zinc oxide and indium tungsten oxide.

According to some embodiments of the disclosure, a method of forming atouch-sensor structure is provided. The method comprises the step offorming a first conductive layer. The first conductive layer includes aplurality of first conductive units arranged along a first axis, aplurality of connection lines, and a plurality of second conductiveunits arranged along a second axis. The second conductive units arecorrespondingly disposed at two opposite sides of each connection line,and the two ends of each connection line are connected to two adjacentfirst conductive units. The method also comprises the step of forming asecond conductive layer. The second conductive layer includes aplurality of bridge lines. The two ends of each bridge line arerespectively electrically connected to the second conductive unitsdisposed at the two opposite sides of each connection line. The methodfurther comprises the step of forming a plurality of insulatingisolation portions. The insulating isolation portions are respectivelydisposed between each of the connection lines and each of the bridgelines, which correspond with each other, for insulating the firstconductive units from the second conductive units. Before forming theinsulating isolation portions, the method further comprises the step offorming an intermediate conductive material layer to completely coverthe first conductive layer or the second conductive layer for isolatingthe first conductive layer from the second conductive layer withoutcoming into direct contact. In addition, the method comprises the stepof patterning the intermediate conductive material layer to from anintermediate conductive layer. The intermediate conductive layer is atleast located in overlapping positions between the bridge lines and thesecond conductive units. The intermediate conductive layer hasconductivity and electrically connects each of the bridge lines with thecorresponding second conductive units.

According to some embodiments of the disclosure, a method of forming atouch-sensor structure is provided. The method comprises the step offorming a first conductive layer. The first conductive layer includes aplurality of first conductive units arranged along a first axis, aplurality of connection lines, and a plurality of second conductiveunits arranged along a second axis. The second conductive units arecorrespondingly disposed at two opposite sides of each connection line,and the two ends of each connection line are connected to two adjacentfirst conductive units. The method also comprises the step of forming asecond conductive layer. The second conductive layer includes aplurality of bridge lines. The two ends of each bridge line arerespectively electrically connected to the second conductive unitsdisposed at the two opposite sides of each connection line. The methodfurther comprises the step of forming a plurality of insulatingisolation portions. The insulating isolation portions are respectivelydisposed between each of the connection lines and each of the bridgelines, which correspond with each other, for insulating the firstconductive units from the second conductive units. After forming theinsulating isolation portions, the method further comprises the step offorming an intermediate conductive material layer to partially cover thefirst conductive layer or the second conductive layer. The areas of theintermediate conductive material layer and the insulating isolationportions are enough to isolate the first conductive layer from thesecond conductive layer without coming into direct contact. In addition,the method comprises the step of patterning the intermediate conductivematerial layer to from an intermediate conductive layer. Theintermediate conductive layer is at least located in overlappingpositions between the bridge lines and the second conductive units. Theintermediate conductive layer has conductivity and electrically connectseach of the bridge lines with the corresponding second conductive units.

In some embodiments, the first conductive layer is directly formed on asubstrate. The intermediate conductive material layer covers the firstconductive layer. The material of the first conductive layer is acrystalline indium tin oxide and the material of the second conductivelayer is a non-crystalline indium tin oxide.

In some embodiments, the step of forming the second conductive layerincludes patterning a second conductive material layer to form thesecond conductive layer. The step of patterning the second conductivematerial layer is performed with the step of patterning the intermediateconductive material layer together in the same step.

In some embodiments, the second conductive layer is directly formed on asubstrate. The intermediate conductive material layer covers the secondconductive layer. The material of the second conductive layer is acrystalline indium tin oxide and the material of the first conductivelayer is a non-crystalline indium tin oxide.

In some embodiments, the step of forming the first conductive layerincludes patterning a first conductive material layer to form the firstconductive layer. The step of patterning the first conductive materiallayer is performed with the step of patterning the intermediateconductive material layer together in the same step.

The embodiments of the disclosure can prevent the second conductivelayer of the touch-sensor structures from re-crystallization which isproduced by the effect of the first conductive layer. Thus, issues suchas failure and poor result in the etching of the second conductive layerare overcome. It can avoid a short-circuit of the touch-sensorstructures to ensure the touch-sensing function. Therefore, the productyield of the touch panels is enhanced.

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure can be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1 shows an illustrative plane view of a part of a touch-sensorstructure according to an embodiment of the disclosure;

FIGS. 2, 4, 6, 8, 10 and 12 show illustrative cross sections oftouch-sensor structures according to some embodiments of the disclosure;

FIGS. 3A-3C show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 2 according to an embodimentof the invention;

FIGS. 5A-5C show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 4 according to an embodimentof the invention;

FIGS. 7A-7C show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 6 according to an embodimentof the invention;

FIGS. 9A-9D show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 8 according to an embodimentof the invention;

FIGS. 11A-11D show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 10 according to an embodimentof the invention; and

FIGS. 13A-13C show illustrative cross sections of intermediate stages offorming the touch-sensor structure of FIG. 12 according to an embodimentof the invention.

DETAILED DESCRIPTION OF THE DISCLOSURES

The following description is of the best-contemplated mode of carryingout the disclosure. This description is made for the purpose ofillustrating the general principles of the disclosure and should not betaken in a limiting sense.

In the descriptions that follow, the orientations of “on”, “over”,“above”, “under” and “below” are used for representing the relationshipbetween the relative positions of each element in the touch-sensorstructures, and are not used to limit the disclosure.

In the accompanying drawings, in order to clearly illustrate thecharacteristics of embodiments of the disclosure, each element in thetouch-sensor structures may not be drawn to scale. Moreover, theembodiments of the touch-sensor structures and the methods of formingthe same are described in an orientation in which the substrate isdisposed at the bottom. However, in at least some touch panelapplications, the touch-sensor structures are provided for users in anorientation in which the substrate is disposed at the top of touchpanels.

Referring to FIG. 1, a plane view of a part of a touch-sensor structure10 of a touch panel according to one or more embodiments is shown. Thetouch-sensor structure 10 includes a first conductive layer 110 (see,for example, FIG. 2), a second conductive layer 120, a plurality ofinsulating isolation portions 104 and an intermediate conductive layer106.

The first conductive layer 110 includes a plurality of first conductiveunits 112 arranged along a first axis, a plurality of connection lines116, and a plurality of second conductive units 114 arranged along asecond axis. The second axis is substantially perpendicular to the firstaxis. There are two second conductive units 114 correspondingly disposedat two opposite sides of each connection line 116. The two ends of eachconnection line 116 are connected to two adjacent first conductive units112.

The second conductive layer 120 includes a plurality of bridge lines108. The two ends of each bridge line 108 are respectively electricallyconnected to the second conductive units 114 disposed at the twoopposite sides of each connection lines 116.

The first conductive units 112 and the connection lines 116 constitute aplurality of first axial electrodes 100Y. The second conductive units114 and the bridge lines 108 constitute a plurality of second axialelectrodes 100X.

The insulating isolation portions 104 are respectively disposed betweeneach of the connection lines 116 and each of the bridge lines 108 forinsulating the first conductive units 112 from the second conductiveunits 114. The insulating isolation portions 104 prevents a shortcircuiting at the intersections of the first axial electrodes 100Y andthe second axial electrodes 100X. The insulating isolation portions 104are formed from a transparent insulating material. In some embodiments,the transparent insulating material is an inorganic material, such assilicon nitride, silicon oxide and silicon oxynitride, or an organicmaterial, such as acrylic resin, or other suitable materials.

The intermediate conductive layer 106 is at least disposed atoverlapping positions 118 between the bridge lines 108 and the secondconductive units 114 to isolate the first conductive layer 110 from thesecond conductive layer 120. The intermediate conductive layer 106 hasconductivity and electrically connects each of the bridge lines 108 withthe corresponding second conductive units 114. The intermediateconductive layer 106 can be formed from a transparent conductivematerial. In some embodiments, the transparent conductive material istin oxide, zinc oxide, aluminum doped zinc oxide, zinc gallium oxide,indium zinc oxide, indium gallium zinc oxide or indium tungsten oxide,or a combination thereof

Various embodiments of touch-sensor structures are illustrated in thecross sections of FIGS. 2-13C. The positions of the intermediateconductive layer 106 in various embodiments will be described in detailas follows.

In embodiments of touch-sensor structures shown in FIGS. 2, 4 and 6, thetouch-sensor structures further comprise a substrate 100. The substrate100 can be used as a carrier. Moreover, the substrate 100 can be used asa cover plate of a touch panel, which can be a strengthening glasssubstrate or a plastic substrate. The first conductive layer 110 isformed on the substrate 100. In addition, the material of the firstconductive layer 110 can be a crystalline indium tin oxide and thematerial of the second conductive layer 120 can be a non-crystallineindium tin oxide.

Referring to FIG. 2, a cross section of a touch-sensor structureaccording to one or more embodiments of the disclosure is shown.

The first conductive units 112 and the connection lines 116 of the firstaxial electrodes 100Y, and the second conductive units 114 of the secondaxial electrodes 100X (see, for example, FIG. 1) are includes in thefirst conductive layer 110 The connections and the functions of theelements of the first conductive layer 110 are described above, and arenot repeated again.

Description of the connections and the functions of the intermediateconductive layer 106 is provided in the description of FIG. 1. In someembodiments, the intermediate conductive layer 106 is disposed on thefirst conductive units 112, the connection lines 116 and the secondconductive units 114 of the first conductive layer 110. Moreover, theintermediate conductive layer 106 corresponds to the pattern of thefirst conductive units 112, the connection lines 116 and the secondconductive units 114. In some embodiments, the intermediate conductivelayer 106 corresponds to, and has substantially the same pattern as, thefirst conductive units 112, the connection lines 116 and the secondconductive units 114.

Description of the connections and the functions of the insulatingisolation portions 104 is provided in the description of FIG. 1. In someembodiments, the insulating isolation portions 104 are disposed on theintermediate conductive layer 106 between each of the connection lines116 and each of the bridge lines 108.

The second conductive layer 120 includes the bridge lines 108. Theconnections and the functions of the bridge lines 108 can also beillustrated in the description of FIG. 1. In some embodiments, thesecond conductive layer 120 is further disposed on the insulatingisolation portions 104 to respectively electrically connect with thesecond conductive units 114 disposed at the two opposite sides of eachconnection line 116.

The connections and the functions of each element, and the material andthe method of forming each element are described in the description ofFIG. 1, and are not repeated again herein.

FIGS. 3A-3C show cross sections of intermediate stages of forming thetouch-sensor structure of FIG. 2 according to at least one embodiment ofthe disclosure. As shown in FIG. 3A, a first conductive material layer101 is formed on the substrate 100. The material of the first conductivematerial layer 101 is a crystalline indium tin oxide. Next, anintermediate conductive material layer 105 is formed to completely coverthe first conductive material layer 101. The first conductive materiallayer 101 includes the subsequently patterned first conductive layer110. The intermediate conductive material layer 105 completely coversthe first conductive layer 110 herein. In some embodiments, the materialof the intermediate conductive material layer 105 is selected from tinoxide, zinc oxide, aluminum doped zinc oxide, zinc gallium oxide, indiumzinc oxide, indium gallium zinc oxide and indium tungsten oxide or acombination thereof. The first conductive material layer 101 and theintermediate conductive material layer 105 can be formed by, for exampledeposition processes, but embodiments including other suitable processesare also contemplated herein.

A step for patterning the first conductive material layer 101 and a stepfor patterning the intermediate conductive material layer 105 areperformed together in the same step for forming the patterns of thefirst conductive layer 110 and the intermediate conductive layer 106 asshown in FIG. 3B. The structures and the connections of the firstconductive layer 110 and the intermediate conductive layer 106 aredescribed in the description of FIG. 2. The intermediate conductivelayer 106 has a pattern corresponding to, or the same as, the pattern ofthe first conductive units 112, the connection lines 116 and the secondconductive units 114 of the first conductive layer 110. In someembodiments, the steps for patterning the first conductive materiallayer 101 and the intermediate conductive material layer 105 arecompleted by, a photolithography and etching process, but withoutlimitation to that. In other embodiments, the first conductive layer 110and the intermediate conductive layer 106 can be formed in separatedsteps. Firstly, the patterned first conductive layer 110 is formed, andthen the intermediate conductive material layer 105 is formed on thefirst conductive layer 110. Next, the intermediate conductive materiallayer 105 is patterned to form the intermediate conductive layer 106.The formed intermediate conductive layer 106 has a pattern thatcorresponds to, or is the same as, the pattern of the first conductivelayer 110.

As shown in FIG. 3C, the insulating isolation portions 104 as describedin FIG. 2 are formed on the intermediate conductive layer 106 andcorrespond to the connection lines of the first conductive layer 110.The insulating isolation portions 104 can be formed by a coating,photolithography and etching process, or by a printing process.

A second conductive material layer is formed on the insulating isolationportions 104, and the second conductive material layer is patterned toform the second conductive layer 120 including the bridge lines 108. Thematerial of the second conductive layer 120 is a non-crystalline indiumtin oxide. In some embodiments. the second conductive material layer isdeposited by, but without limitation to, a low-temperature depositionprocess. In some embodiments, the second conductive material layer ispatterned by, but without limitation to, a photolithography and etchingprocess to obtain the second conductive layer 120 including the bridgelines 108 as shown in FIG. 2. In some embodiments, the etching processdescribed above is performed by using an oxalic acid solution to formthe bridge lines 108. Then, the main structure of the touch-sensorstructure of FIG. 2 is completed.

In some embodiments, before the insulating isolation portions 104 areformed, both the formed intermediate conductive material layer 105 andthe subsequently patterned intermediate conductive layer 106 completelycover the first conductive layer 110 to isolate the first conductivelayer 110 from the subsequently formed second conductive layer 120without coming into direct contact between the first and secondconductive layers 110 and 120. Thus, there is no crystallizationproduced between the first conductive layer 110 and the subsequentlyformed second conductive layer 120.

Referring to FIG. 4, a cross section of a touch-sensor structureaccording to an embodiment of the disclosure is shown.

The first conductive layer 110 includes the first conductive units 112and the connection lines 116 which constitute the first axial electrodes100Y, and the second conductive units 114 of the second axial electrodes100X as shown in FIG. 1. The connections and the functions of theelements of the first conductive layer 110 are described above, and arenot repeated again. In some embodiments, the first conductive layer 110is divided into a first region A and a second region B. The first regionA is a region of the first conductive layer 110 overlapping theinsulating isolation portions 104. The second region B is a region ofthe first conductive layer 110 that does not overlap the insulatingisolation portions 104. In some embodiments, the intermediate conductivelayer 106 is not disposed in the first region A. The intermediateconductive layer 106 is disposed in the second region B of the firstconductive layer 110 and directly contacts with the first conductivelayer 110. The intermediate conductive layer 106 has a patterncorresponding to and overlapping with the pattern of the firstconductive layer 110 in the second region B. In some embodiments, theintermediate conductive layer 106 has a pattern that is the same as, andconsistent with, the pattern of the first conductive layer 110 in thesecond region B.

The connections and the functions of the insulating isolation portions104 can also be illustrated in the description of FIG. 1. In someembodiments, the insulating isolation portions 104 are respectivelydisposed on each of the connection lines 116.

The second conductive layer 120 includes the bridge lines 108. Theconnections and the functions of the bridge lines 108 are described inthe description of FIG. 1. In some embodiments, the second conductivelayer 120 is further disposed on the insulating isolation portions 104to respectively electrically connect with the second conductive units114 disposed at the two opposite sides of each connection line 116.

In addition, the connections and the functions of each element, and thematerial and the method of forming each element are described in thedescription of FIG. 1, and are not repeated again herein.

FIGS. 5A-5C show cross sections of intermediate stages of forming thetouch-sensor structure of FIG. 4 according to one or more embodiments ofthe disclosure. As shown in FIG. 5A, first, a pattern of the firstconductive layer 110 as shown in FIG. 4 is formed on the substrate 100.The first conductive layer 110 can be formed by a deposition,photolithography and etching process. The material of the firstconductive layer 110 is a crystalline indium tin oxide. A firstconductive material layer is deposited on the substrate 100, and thefirst conductive material layer is patterned by a photolithography andetching process to form the first conductive layer 110. The pattern ofthe first conductive layer 110 can also be formed by other methods inone step, for example by a printing process.

As shown in FIG. 5B, the insulating isolation portions 104 as describedin FIG. 4 are formed over the connection lines of the first conductivelayer 110. The insulating isolation portions 104 can be formed by acoating, photolithography and etching process, or by a printing process.

As shown in FIG. 5C, after the insulating isolation portions 104 areformed, an intermediate conductive material layer 105 is formed by, butwithout limitation to, a deposition process to cover a portion of thefirst conductive layer 110. The material of the intermediate conductivematerial layer 105 is the same as in the above description, and tosimplify the description it is not repeated again herein. In someembodiments, the intermediate conductive material layer 105 is patternedby, but without limitation to, a photolithography and etching process toform the intermediate conductive layer 106 as shown in FIG. 4. In someembodiments, the intermediate conductive layer 106 is formed in thesecond region B which is the region of the first conductive layer 110that does not overlap the insulating isolation portions 104. In thesecond region B, the intermediate conductive layer 106 directly contactswith the first conductive layer 110. Moreover, the intermediateconductive layer 106 has a pattern corresponding to and overlapped withthe pattern of the first conductive layer 110 in the second region B.The areas of forming the intermediate conductive material layer 105 (oreven the patterned intermediate conductive layer 106) and the insulatingisolation portions 104 are enough to isolate the first conductive layer110 from the subsequently formed second conductive layer 120 withoutcoming into direct contact therebetween. Thus, the probability ofcrystallization occurring at the second conductive layer 120 is reduced.

A second conductive material layer is formed on the insulating isolationportions 104, and the second conductive material layer is patterned toform the second conductive layer 120 including the bridge lines 108. Thematerial of the second conductive layer 120 is a non-crystalline indiumtin oxide. In some embodiments, the second conductive material layer isdeposited by, but without limitation to, a low-temperature depositionprocess. In some embodiments, the second conductive material layer ispatterned by, but without limitation to, a photolithography and etchingprocess to obtain the second conductive layer 120 including the bridgelines 108 as shown in FIG. 4. In some embodiments, the etching processdescribed above is performed by using an oxalic acid solution to formthe bridge lines 108. Then, the main structure of the touch-sensorstructure of FIG. 4 is completed.

Referring to FIG. 6, a cross section of a touch-sensor structureaccording to one or more embodiments of the disclosure is shown.

The first conductive layer 110 includes the first conductive units 112and the connection lines 116 which constitute the first axial electrodes100Y, and the second conductive units 114 of the second axial electrodes100X as shown in FIG. 1. The connections and the functions of theelements of the first conductive layer 110 are described above, and thedescription is not repeated again here.

The connections and the functions of the intermediate conductive layer106 are described in the description of FIG. 1. In some embodiments, theintermediate conductive layer 106 is further disposed between each ofthe bridge lines 108 and each of the insulating isolation portions 104,which correspond with each other. The intermediate conductive layer 106has a pattern corresponding to or the same as the pattern of the bridgelines 108.

The connections and the functions of the insulating isolation portions104 are described in the description of FIG. 1. In some embodiments, theinsulating isolation portions 104 are disposed on each of the connectionlines 116, but do not completely cover the connection lines 116. In someembodiments, the two ends of each connection line 116 are connected totwo adjacent first conductive units 112.

The second conductive layer 120 includes the bridge lines 108. Theconnections and the functions of the bridge lines 108 can also beillustrated in the description of FIG. 1. In some embodiments, thesecond conductive layer 120 is further disposed on the intermediateconductive layer 106 to respectively electrically connect with thesecond conductive units 114 disposed at the two opposite sides of eachconnection line 116.

In addition, the connections and the functions of each element, and thematerial and the method of forming each element can also be illustratedin the description of FIG. 1, and are not repeated again herein.

Referring to FIGS. 7A-7C, which shows cross sections of intermediatestages of forming the touch-sensor structure of FIG. 6 according to anembodiment of the disclosure. As shown in FIG. 7A, a pattern of thefirst conductive layer 110 as shown in FIG. 6 is formed on the substrate100. The first conductive layer 110 can be formed by a deposition,photolithography and etching process. The material of the firstconductive layer 110 is a crystalline indium tin oxide. A firstconductive material layer is firstly deposited on the substrate 100 andthen the first conductive material layer is patterned by aphotolithography and etching process to form the first conductive layer110. The pattern of the first conductive layer 110 can also be formed byother methods in one step, for example by a printing process.

As shown in FIG. 7B, the insulating isolation portions 104 as describedin FIG. 6 are formed over the connection lines of the first conductivelayer 110. The insulating isolation portions 104 can be formed by acoating, photolithography and etching process, or by a printing process.

As shown in FIG. 7C, after the insulating isolation portions 104 areformed, an intermediate conductive material layer 105 is formed by, butwithout limitation to, a deposition process to cover a portion of thefirst conductive layer 110 and all of the insulating isolation portions104. The material of the intermediate conductive material layer 105 isthe same as in the above description and is not repeated again herein tosimplify the description. Next, a second conductive material layer 107is formed on the intermediate conductive material layer 105. Thematerial of the second conductive material layer 107 is anon-crystalline indium tin oxide. In some embodiments, the secondconductive material layer 107 is deposited by, but without limitationto, a low-temperature deposition process. The intermediate conductivematerial layer 105 is enough to isolate the first conductive layer 110from the subsequently formed second conductive layer 120 without cominginto direct contact therebetween. Thus, it can prevent the secondconductive layer 120 from being affected by the first conductive layer110 and crystallization in the second conductive layer 120. A pooretching issue of the second conductive layer 120 is thereby prevented.

In some embodiments, the steps for patterning the second conductivematerial layer 107 and the intermediate conductive material layer 105are performed by, but without limitation to, a photolithography andetching process, and in the same step or in separated steps for formingthe second conductive layer 120 including the bridge lines 108 and theintermediate conductive layer 106, respectively, as shown in FIG. 6. Asa result, the intermediate conductive layer 106 has a patterncorresponding to or the same as the pattern of the subsequently formedbridge lines 108. The intermediate conductive layer 106 is formedbetween each of the bridge lines 108 and each of the insulatingisolation portions 104, which correspond with each other. The etchingprocess described above can be performed by using an oxalic acidsolution to form the bridge lines 108. Then, the main structure of thetouch-sensor structure of FIG. 6 is completed.

In embodiments of touch-sensor structures of FIGS. 8, 10 and 12, thetouch-sensor structures further comprise a substrate 100. The substrate100 can be used as a carrier. Moreover, the substrate 100 can be used asa cover plate of a touch panel, which can be a strengthening glasssubstrate or a plastic substrate. The second conductive layer 120 isformed on the substrate 100. In addition, the material of the secondconductive layer 120 can be a crystalline indium tin oxide and thematerial of the first conductive layer 110 can be a non-crystallineindium tin oxide.

Referring to FIG. 8, a cross section of a touch-sensor structureaccording to an embodiment of the disclosure is shown.

The second conductive layer 120 includes the bridge lines 108 as shownin FIG. 1. The connections and the functions of the bridge lines 108 aredescribed above, and are not repeated again.

The connections and the functions of the intermediate conductive layer106 can be illustrated in the description of FIG. 1. In someembodiments, the intermediate conductive layer 106 is disposed betweeneach of the insulating isolation portions 104 and each of the bridgelines 108, which correspond with each other. The intermediate conductivelayer 106 has a pattern corresponding to or the same as the pattern ofthe bridge lines 108.

The connections and the functions of the insulating isolation portions104 can also be illustrated in the description of FIG. 1. In someembodiments, the insulating isolation portions 104 are disposed on theintermediate conductive layer 106 which is disposed between each of theconnection lines 116 and each of the bridge lines 108.

The first conductive layer 110 includes the first conductive units 112and the connection lines 116 which constitute the first axial electrodes100Y, and the second conductive units 114 of the second axial electrodes100X as shown in FIG. 1. In some embodiments, a portion of the firstconductive layer 110, such as the first conductive units 112 and thesecond conductive units 114, is disposed on the substrate 100. Anotherportion of the first conductive layer 110, such as the connection lines116, is not disposed on the substrate 100, but is disposed on theinsulating isolation portions 104. Other details of the structure andthe connection of the first conductive layer 110 can be referred to thedescription of FIG. 1.

In addition, the connections and the functions of each element, and thematerial and the method of forming each element can also be illustratedin the description of FIG. 1, and are not repeated again herein.

Referring to FIGS. 9A-9D, which shows cross sections of intermediatestages of forming the touch-sensor structure of FIG. 8 according to anembodiment of the disclosure. As shown in FIG. 9A, firstly, a secondconductive material layer 107 is formed on the substrate 100. Thematerial of the second conductive material layer 107 is a crystallineindium tin oxide. In some embodiments, the second conductive materiallayer 107 is formed by, but without limitation to, a deposition process.Next, an intermediate conductive material layer 105 is formed tocompletely cover the second conductive material layer 107. The secondconductive material layer 107 includes the subsequently patterned secondconductive layer 120, thus the intermediate conductive material layer105 completely covers the second conductive layer 120 herein. Thematerial of the intermediate conductive material layer 105 is recited asabove and is not repeated herein. In some embodiments, the intermediateconductive material layer 105 is formed by, but without limitation to,deposition processes.

As shown in FIG. 9B, the steps for patterning the second conductivematerial layer 107 and the intermediate conductive material layer 105can be performed together by a photolithography and etching process inthe same step for forming the bridge lines 108 of the second conductivelayer 120 and the intermediate conductive layer 106. The structures andthe connections of the formed second conductive layer 120 and theintermediate conductive layer 106 can be illustrated in the descriptionof FIG. 8. Thus, the intermediate conductive layer 106 has a patterncorresponding to or the same as the pattern of the bridge lines 108. Insome embodiments, the steps for patterning the second conductivematerial layer 107 and the intermediate conductive material layer 105are completed by, but without limitation to, a photolithography andetching process. In other embodiments, the second conductive layer 120and the intermediate conductive layer 106 can be formed in separatedsteps. Firstly, the patterned second conductive layer 120 is formed, andthen the intermediate conductive material layer 105 is formed on thesecond conductive layer 120. Next, the intermediate conductive materiallayer 105 is patterned to form the intermediate conductive layer 106.The formed intermediate conductive layer 106 has a pattern correspondingto or the same as the pattern of the second conductive layer 120.

As shown in FIG. 9C, the insulating isolation portions 104 as describedin FIG. 8 are formed on the intermediate conductive layer 106. Theinsulating isolation portions 104 can be formed by a coating,photolithography and etching process, or by a printing process.

As shown in FIG. 9D, after the insulating isolation portions 104 areformed, a first conductive material layer 101 is formed. The material ofthe first conductive material layer 101 is a non-crystalline indium tinoxide. In some embodiments, the first conductive material layer 101 isdeposited by, but without limitation to, a low-temperature depositionprocess. In some embodiments, the first conductive material layer 101 ispatterned by, but without limitation to, a photolithography and etchingprocess to form the pattern of the first conductive layer 110 as shownin FIG. 8. The etching process described above can be performed by usingan oxalic acid solution. Then, the main structure of the touch-sensorstructure of FIG. 8 is completed.

In some embodiments, before the insulating isolation portions 104 areformed, the formed intermediate conductive material layer 105 or thesubsequently patterned intermediate conductive layer 106 is enough toisolate the second conductive layer 120 from the subsequently formedfirst conductive layer 110 without a large area of direct contactbetween the first and second conductive layers 110 and 120. Thus, it canprevent or reduce crystallization produced between the second conductivelayer 120 and the subsequently formed first conductive layer 110.

Referring to FIG. 10, a cross section of a touch-sensor structureaccording to an embodiment of the disclosure is shown.

The second conductive layer 120 includes the bridge lines 108 as shownin FIG. 1. The connections and the functions of the bridge lines 108 aredescribed above, and are not repeated again.

The connections and the functions of the intermediate conductive layer106 can be illustrated in the description of FIG. 1. In someembodiments, the intermediate conductive layer 106 is disposed atoverlapping positions 118 between each of the bridge lines 108 and thesecond conductive units 114. Moreover, the intermediate conductive layer106 wraps the outer sides of the bridge lines 108.

The connections and the functions of the insulating isolation portions104 can also be illustrated in the description of FIG. 1. In someembodiments, the insulating isolation portions 104 are disposed on eachof the bridge lines 108. Thus, the region in which the intermediateconductive layer 106 wraps the bridge lines 108 is the outer edges ofthe bridge lines 108 that are outside of the insulating isolationportions 104.

The first conductive layer 110 includes the first conductive units 112and the connection lines 116 which constitute the first axial electrodes100Y, and the second conductive units 114 of the second axial electrodes100X as shown in FIG. 1. In some embodiments, a portion of the firstconductive layer 110, such as the first conductive units 112 and thesecond conductive units 114, is disposed on the substrate 100 andcompletely isolated from the second conductive layer 120. The portion ofthe first conductive layer 110 is electrically connected with the secondconductive layer 120. Another portion of the first conductive layer 110not disposed on the substrate 100, such as the connection lines 116, isdisposed on the insulating isolation portions 104. Other details of thestructure and the connection of the first conductive layer 110 can beillustrated in the description of FIG. 1.

In addition, the connections and the functions of each element, and thematerial and the method of forming each element can also be illustratedin the description of FIG. 1, and are not repeated again herein.

Referring to FIGS. 11A-11D, which shows cross sections of intermediatestages of forming the touch-sensor structure of FIG. 10 according to anembodiment of the disclosure. As shown in FIG. 11A, the bridge lines 108of the second conductive layer 120 can be formed on the substrate 100 bya deposition, photolithography and etching process. The material of thesecond conductive layer 120 is a crystalline indium tin oxide. A secondconductive material layer is firstly deposited on the substrate 100 andthen the second conductive material layer is patterned by aphotolithography and etching process to form the second conductive layer120. The pattern of the second conductive layer 120 can also be formedby other methods in one step, for example by a printing process.

As shown in FIG. 11B, the insulating isolation portions 104 as describedin FIG. 10 are formed on the bridge lines 108 of the second conductivelayer 120. The insulating isolation portions 104 can be formed by acoating, photolithography and etching process, or by a printing process.

As shown in FIG. 11C, after the insulating isolation portions 104 areformed, in some embodiments, an intermediate conductive material layer105 is formed by, a deposition process to cover a portion of the secondconductive layer 120, but without limitation to that. The material ofthe intermediate conductive material layer 105 is the same as in theabove description and is not repeated again herein to simplify thedescription. In some embodiments, the intermediate conductive materiallayer 105 is patterned by, but without limitation to, a photolithographyand etching process to form the intermediate conductive layer 106 asshown in FIG. 10. In some embodiments, the intermediate conductive layer106 is located at the overlapping positions between the bridge lines 108and the subsequently formed second conductive units 114 of the firstconductive layer 110. Moreover, the intermediate conductive layer 106wraps the outer sides of the bridge lines 108. In some embodiments, theareas of forming the intermediate conductive material layer 105 and theinsulating isolation portions 104 are enough to isolate the secondconductive layer 120 from the subsequently formed first conductive layer110 without coming into direct contact therebetween.

As shown in FIG. 11D, after the insulating isolation portions 104 areformed, a first conductive material layer 101 is formed. The material ofthe first conductive material layer 101 is a non-crystalline indium tinoxide. In some embodiments, the first conductive material layer 101 isdeposited by, but without limitation to, a low-temperature depositionprocess. In some embodiments, the first conductive material layer 101 ispatterned by, a photolithography and etching process to form the patternof the first conductive layer 110 as shown in FIG. 10, but withoutlimitation to that. The etching process described above can be performedby using an oxalic acid solution. Then, the main structure of thetouch-sensor structure of FIG. 10 is completed.

Referring to FIG. 12, a cross section of a touch-sensor structureaccording to an embodiment of the disclosure is shown.

The second conductive layer 120 includes the bridge lines 108 as shownin FIG. 1. The connections and the functions of the bridge lines 108 aredescribed above, and are not repeated again.

The connections and the functions of the intermediate conductive layer106 can be illustrated in the description of FIG. 1. In someembodiments, the intermediate conductive layer 106 is further disposedbetween each of the connection lines 116 and each of the insulatingisolation portions 104, which correspond with each other. Moreover, theintermediate conductive layer 106 is disposed between the firstconductive units 112 and the substrate 100, and between the secondconductive units 114 and the substrate 100. The intermediate conductivelayer 106 has a pattern corresponding to or the same as the pattern ofthe first conductive units 112, the connection lines 116 and the secondconductive units 114.

Referring to FIGS. 13A-13C, which shows cross sections of intermediatestages of forming the touch-sensor structure of FIG. 12 according to anembodiment of the disclosure. As shown in FIG. 13A, in some embodiments,the bridge lines 108 of the second conductive layer 120 is formed on thesubstrate 100 by, but without limitation to, a deposition,photolithography and etching process. The material of the secondconductive layer 120 is a crystalline indium tin oxide. A secondconductive material layer is firstly deposited on the substrate 100 andthen the second conductive material layer is patterned by aphotolithography and etching process to form the second conductive layer120. The pattern of the second conductive layer 120 can also be formedby other methods in one step, for example by a printing process.

As shown in FIG. 13B, the insulating isolation portions 104 as describedin FIG. 12 are formed on the bridge lines 108 of the second conductivelayer 120. The insulating isolation portions 104 can be formed by acoating, photolithography and etching process, or by a printing process.

As shown in FIG. 13C, after the insulating isolation portions 104 areformed, in some embodiments, an intermediate conductive material layer105 is formed by, but without limitation to, a deposition process. Thematerial of the intermediate conductive material layer 105 is the sameas in the above description and is not repeated again herein. The areaof the intermediate conductive material layer 105 at least cancompletely cover the second conductive layer 120. In some embodiments,the area of the intermediate conductive material layer 105 furthercompletely covers the insulating isolation portions 104 and a portion ofthe substrate 100. Next, a first conductive material layer 101 is formedon the intermediate conductive material layer 105. The material of thefirst conductive material layer 101 is a non-crystalline indium tinoxide. In some embodiments, the first conductive material layer 101 isdeposited by, but without limitation to, a low-temperature depositionprocess. The intermediate conductive material layer 105 is enough toisolate the second conductive layer 120 from the subsequently formedfirst conductive layer 110 without coming into direct contacttherebetween. Thus, the intermediate conductive material layer 105 canprevent the second conductive layer 120 from being affected by the firstconductive layer 110 and crystallization in the second conductive layer120 is thereby prevented. Thus, a poor etching issue of the secondconductive layer 120 is prevented.

In some embodiments, the steps for patterning the first conductivematerial layer 101 and the intermediate conductive material layer 105are performed by, but without limitation to, a photolithography andetching process, and in the same step or separated steps for forming thepatterns of the first conductive layer 110 and the intermediateconductive layer 106 as shown in FIG. 12, respectively. As a result, theintermediate conductive layer 106 has a pattern corresponding to or thesame as the pattern of the first conductive units 112, the connectionlines 116 and the second conductive units 114 as shown in FIG. 12.Moreover, the intermediate conductive layer 106 is formed at the abovementioned overlapping positions 118. In addition, the intermediateconductive layer 106 is further formed between each of the connectionlines 116 and each of the insulating isolation portions 104, whichcorrespond with each other. Moreover, the intermediate conductive layer106 is formed between the first conductive units 112 and the substrate100, and between the second conductive units 114 and the substrate 100.The etching process described above can be performed by using an oxalicacid solution to form the first conductive layer 110 and theintermediate conductive layer 106. Then, the main structure of thetouch-sensor structure of FIG. 12 is completed.

In summary, according to the embodiments of the disclosure, in theintermediate stages of forming the touch-sensor structures and in thecompleted touch-sensor structures, the intermediate conductive materiallayer 105 or the intermediate conductive layer 106 can isolate thenon-crystalline indium tin oxide (the first conductive layer 110 or thesecond conductive layer 120) from the crystalline indium tin oxide (thesecond conductive layer 120 or the first conductive layer 110) withoutcoming into direct contact (of a large area) therebetween. The materialof the intermediate conductive material layer 105 or the intermediateconductive layer 106 is different from the material of the secondconductive layer 120 and/or the first conductive layer 110. Thus, in thewhole fabrication process, the non-crystalline indium tin oxide (thefirst conductive layer 110 or the second conductive layer 120) is notaffected (or it is less affected) by the crystalline indium tin oxide(the second conductive layer 120 or the first conductive layer 110). Theembodiments of the disclosure can prevent the non-crystalline indium tinoxide (the first conductive layer 110 or the second conductive layer120) from crystallization and poor etching of the non-crystalline indiumtin oxide is thereby prevented. As a result, the embodiments of thedisclosure can prevent the touch-sensor structures from short-circuitingthat is produced by a residue of the etching process of thenon-crystalline indium tin oxide. Therefore, the embodiments of thedisclosure can ensure the touch-sensing function of the touch-sensorstructures and enhance the production yield of the touch panels.

While the disclosure has been described by way of example and in termsof certain embodiments, it is to be understood that the disclosure isnot limited to the disclosed embodiments. The disclosure is intended tocover various modifications and similar arrangements (as would beapparent to those skilled in the art). Therefore, the scope of theappended claims should be accorded the broadest interpretation so as toencompass all such modifications and similar arrangements.

What is claimed is:
 1. A method of forming a touch-sensor structure,comprising: forming a first conductive layer, wherein the firstconductive layer includes a plurality of first conductive units arrangedalong a first axis, a plurality of connection lines, and a plurality ofsecond conductive units arranged along a second axis, wherein the secondconductive units are correspondingly disposed at two opposite sides ofeach connection line, and the two ends of each connection line areconnected to two adjacent first conductive units; forming a secondconductive layer, wherein the second conductive layer includes aplurality of bridge lines, and the two ends of each bridge line arerespectively electrically connected to the second conductive unitsdisposed at the two opposite sides of each connection line; forming aplurality of insulating isolation portions, wherein the insulatingisolation portions are respectively disposed between each of theconnection lines and each of the bridge lines, which correspond witheach other, for insulating the first conductive units from the secondconductive units; before forming the insulating isolation portions,forming an intermediate conductive material layer to completely coverthe first conductive layer or the second conductive layer for isolatingthe first conductive layer from the second conductive layer withoutcoming into direct contact; and patterning the intermediate conductivematerial layer to from an intermediate conductive layer, wherein theintermediate conductive layer is at least located in an overlappingposition between the bridge lines and the second conductive units, andthe intermediate conductive layer has a conductivity and electricallyconnects each of the bridge lines with the corresponding secondconductive units.
 2. The method of claim 1, wherein the first conductivelayer is directly formed on a substrate, the intermediate conductivematerial layer covers the first conductive layer, the material of thefirst conductive layer is a crystalline indium tin oxide, and thematerial of the second conductive layer is a non-crystalline indium tinoxide.
 3. The method of claim 1, wherein the second conductive layer isdirectly formed on a substrate, the intermediate conductive materiallayer covers the second conductive layer, the material of the secondconductive layer is a crystalline indium tin oxide, and the material ofthe first conductive layer is a non-crystalline indium tin oxide.
 4. Amethod of forming a touch-sensor structure, comprising: forming a firstconductive layer, wherein the first conductive layer includes aplurality of first conductive units arranged along a first axis, aplurality of connection lines, and a plurality of second conductiveunits arranged along a second axis, wherein the second conductive unitsare correspondingly disposed at two opposite sides of each connectionline, and the two ends of each connection line are connected to twoadjacent first conductive units; forming a second conductive layer,wherein the second conductive layer includes a plurality of bridgelines, and the two ends of each bridge line are respectivelyelectrically connected to the second conductive units disposed at thetwo opposite sides of each connection line; forming a plurality ofinsulating isolation portions, wherein the insulating isolation portionsare respectively disposed between each of the connection lines and eachof the bridge lines, which correspond with each other, for insulatingthe first conductive units from the second conductive units; afterforming the insulating isolation portions, forming an intermediateconductive material layer to partially cover the first conductive layeror the second conductive layer, wherein the areas of the intermediateconductive material layer and the insulating isolation portions are forisolating the first conductive layer from the second conductive layerwithout coming into direct contact; and patterning the intermediateconductive material layer to from an intermediate conductive layer,wherein the intermediate conductive layer is at least located inoverlapping positions between the bridge lines and the second conductiveunits, and the intermediate conductive layer has a conductivity andelectrically connects each of the bridge lines with the correspondingsecond conductive units.
 5. The method of claim 4, wherein the firstconductive layer is directly formed on a substrate, the intermediateconductive material layer partially covers the first conductive layer,the material of the first conductive layer is a crystalline indium tinoxide and the material of the second conductive layer is anon-crystalline indium tin oxide, wherein the step of forming the secondconductive layer comprises patterning a second conductive material layerto form the second conductive layer, and the step of patterning thesecond conductive material layer is performed with the step ofpatterning the intermediate conductive material layer together in thesame step.
 6. The method of claim 4, wherein the second conductive layeris directly formed on a substrate, the intermediate conductive materiallayer partially covers the second conductive layer, the material of thesecond conductive layer is a crystalline indium tin oxide, and thematerial of the first conductive layer is a non-crystalline indium tinoxide, wherein the step of forming the first conductive layer comprisespatterning a first conductive material layer to form the firstconductive layer, and the step of patterning the first conductivematerial layer is performed with the step of patterning the intermediateconductive material layer together in the same step.